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| STU13NB60 N-CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET PRELIMINARY DATA TYPE STU13NB60 s s s s s s V DSS 600 V R DS(on) < 0.45 ID 12.6 A TYPICAL RDS(on) = 0.4 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 30V GATE TO SOURCE VOLTAGE RATING 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s Max220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM (*) P t ot dv/dt(1) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o o Value 600 600 30 12.6 7.9 50.4 160 1.28 4.5 -65 to 150 150 (1) ISD 13A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX Uni t V V V A A A W W/ C V/ ns o o o C C 1/6 (*) Pulse width limited by safe operating area October 1997 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. STU13NB60 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.78 62.5 0.5 300 C/W oC/W o C/W o C o AVALANCHE CHARACTERISTICS Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) Max Valu e 12.6 800 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 A o @ 100 C V GS = 0 Min. 600 1 50 100 Typ . Max. Un it V A A nA V DS = Max Rating Zero G ate Voltage Drain Current (VGS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 30 V T c = 125 C o ON () Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate Threshold Voltage V DS = VGS Test Cond ition s ID = 250 A ID =6.3 A 12.6 Min. 3 Typ . 4 0.4 Max. 5 0.45 Un it V A Static Drain-source On V GS = 10V Resistance On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V DYNAMIC Symb ol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D =6.3 A VGS = 0 Min. 6 Typ . 9 2950 370 33 3840 480 43 Max. Un it S pF pF pF 2/6 STU13NB60 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition s V DD = 300 V I D = 6.3 A VGS = 10 V R G = 4.7 (see test circuit, figure 3) V DD = 480 V I D =12.6 A V GS = 10 V Min. Typ . 30 14 65 18 27 Max. 42 20 91 Un it ns ns nC nC nC SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 480 V I D = 12.6 A R G = 4.7 V GS = 10 V (see test circuit, figure 5) Min. Typ . 21 18 32 Max. 29 25 45 Un it ns ns ns SOURCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 12.6 A V GS = 0 820 9.6 23.5 Test Cond ition s Min. Typ . Max. 12.6 Un it A A V ns C A 1.6 I SD = 12.6 A di/dt = 100 A/s o T j = 150 C V DD = 100 V (see test circuit, figure 5) () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/6 STU13NB60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STU13NB60 Max220 MECHANICAL DATA DIM. MIN. A A1 A2 b b1 b2 c D D1 D2 D3 e E L L1 4.3 2.2 2.9 0.7 1.25 1.2 0.45 15.9 9 0.8 2.8 2.44 10.05 13.2 3 mm TYP. MAX. 4.6 2.4 3.1 0.93 1.4 1.38 0.6 16.3 9.35 1.2 3.2 2.64 10.35 13.6 3.4 0.354 0.031 0.110 0.096 0.396 0.520 0.118 MIN. 0.169 0.087 0.114 0.027 0.049 0.047 0.18 0.626 inch TYP. MAX. 0.181 0.094 0.122 0.036 0.055 0.054 0.023 0.641 0.368 0.047 0.126 0.104 0.407 0.535 0.133 D3 D2 D1 A A2 C D b1 b2 E b e L1 L A1 P011R 5/6 STU13NB60 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6 |
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